Structural Properties of SI-GaAs Grown in Space

Details Structural Properties of SI-GaAs Grown in Space Structural Properties of SI-GaAs Grown in Space

Jan 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999adspr..24.1211c&link_type=abstract

Advances in Space Research, Volume 24, Issue 10, p. 1211-1214.

Physics

2

Scientific paper

The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 arc seconds. The average density of dislocations revealed by molten KOH is 2.0 × 104 cm-2, and the highest density is 3.1 × 104 cm-2. The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power

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