Stressed Ge:Ga photoconductor with a compact and stable stressing assembly

Details Stressed Ge:Ga photoconductor with a compact and stable stressing assembly Stressed Ge:Ga photoconductor with a compact and stable stressing assembly

May 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989infph..29..255h&link_type=abstract

(Eidgenoessische Technische Hochschule Zuerich, International Conference on Infrared Physics, 4th, Zurich, Switzerland, Aug. 22-

Physics

15

Far Infrared Radiation, Gallium Alloys, Germanium Alloys, Photoconductors, Satellite-Borne Instruments, Stress Relaxation, Doped Crystals, Infrared Detectors

Scientific paper

The fabrication and performance of stressed Ge:Ga photoconductors for space or balloon-borne astronomical or atmospheric observations at IR wavelengths up to 200 microns are reported. Crystals with Ga concentration 2 x 10 to the 14th/cu cm are used to manufacture the detector elements, and the stressing assembly employs stacks of 20 cone-disk springs, providing 140 kgf of elastic force and deflection of 50 microns at safety factor 1/3. Stable operation at 2 K is demonstrated, with NEP of 2 x 10 to the -18th W/sq rt Hz and responsivity 15 A/W for photon flux 1.1 x 10 to the 6th photons/sec.

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