Physics
Scientific paper
Apr 2007
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..623l&link_type=abstract
SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 623-623 (2007).
Physics
Iii-V Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Iii-V And Ii-Vi Semiconductors, Charge Carriers: Generation, Recombination, Lifetime, And Trapping
Scientific paper
The transport properties of undoped Al0.25Ga0.75N/GaN HEMT structures grown by MOCVD were investigated in a temperature range of 20 K-350 K. With Quantitative Mobility Spectrum Analysis (QMSA) method; it was found that, all conduction in undoped Al0.25Ga0.75N/GaN HEMT structures belong to the two dimensional electron gas (2DEG). With the acception of Hall sheet carrier density is the total polarization induced charge density, strains of 2DEG interfaces were calculated. Calculated strain values are in good agreement with the literature. Effects of the growth parameters of the nucleation layers of samples on the mobility and density of the 2DEG are listed.
S. B. N.
Kasap M.
L&Idot
Ozbay Ekmel
Şes&Idot
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