Stark widths and shifts of singly ionized silicon spectral lines

Details Stark widths and shifts of singly ionized silicon spectral lines Stark widths and shifts of singly ionized silicon spectral lines

Oct 1983

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983phrva..28.2264l&link_type=abstract

Physical Review A - General Physics, 3rd Series (ISSN 0556-2791), vol. 28, Oct. 1983, p. 2264-2268.

Physics

General Physics

24

Electron Plasma, Laser Interferometry, Plasma Spectra, Silicon, Spectral Line Width, Stark Effect, Electron Density Profiles, Electron States, H Beta Line, Stellar Atmospheres

Scientific paper

Stark widths and shifts of Si II lines from five visible multiplets are measured in an electromagnetically driven T tube. The electron density is determined by laser interferometry and from H-beta profiles, and the temperature is obtained from the intensity ratios of Si III and Si II lines and from Boltzmann slopes of Ne I lines. Close agreement is obtained with the results of Konjevic et al. (1970) and Puric et al. (1973, 1974, 1976, 1978) using similar techniques. Comparisons with other theoretical and experimental findings are made. The ionized Si results show that the atomic structure configuration might be as important as the collisional problems for linewidth and shift calculations, especially when strong configuration interactions are involved.

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