Spatially highly resolved study of AFM scanning tip quantum dot local interaction

Details Spatially highly resolved study of AFM scanning tip quantum dot local interaction Spatially highly resolved study of AFM scanning tip quantum dot local interaction

Aug 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005njph....7..185k&link_type=abstract

New Journal of Physics, Volume 7, Issue 1, pp. 185 (2005).

Physics

11

Scientific paper

Scanning-gate imaging of semiconductor quantum dots (QDs) promises access to probability distributions of quantum states. It could therefore be a novel tool for designing and optimizing tailored quantum states in such systems. A detailed study of a lithographically defined semiconductor QD in the Coulomb-blockade regime is presented, making use of the scanning-gate technique at a base temperature of 300 mK. The method allows a one-by-one manipulation of electrons in the structure. The obtained images interpreted with a suitable QD model guide the way to a local investigation of the electronic interior of the QD. Future perspectives of scanning-gate experiments on QDs are discussed.

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