Small signal circuit modeling for semiconductor self-assembled quantum dot laser

Details Small signal circuit modeling for semiconductor self-assembled quantum dot laser Small signal circuit modeling for semiconductor self-assembled quantum dot laser

Mar 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011opten..50c4202h&link_type=abstract

Optical Engineering, Volume 50, Issue 3, pp. 034202-034202-5 (2011).

Physics

Carrier Relaxation Time, Equivalent Circuits, Optical Modulation, Quantum Dot Lasers, Self-Assembly, Spectral Line Broadening, Wetting, Semiconductor Lasers, Laser Diodes, Design Of Specific Laser Systems, Modulation, Tuning, And Mode Locking

Scientific paper

In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-assembled quantum dot (QD) laser, based on the standard rate equations. By using the presented model, modulation response of QD laser is investigated. The simulation results show that retarded carrier relaxation due to phonon bottleneck degrades the modulation and impulse responses of a QD laser. It is shown that modulation bandwidth is increased with larger inhomogeneous broadening. Also, our model describes the effects of carrier recombinations inside and outside of a QD region, on the modulation response behavior.

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