Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

Details Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium

2010-08-27

arxiv.org/abs/1008.4736v2

New Journal of Physics, 13 025012 (2011)

Physics

Quantum Physics

20 pages, 13 figures, accepted by New Journal of Physics

Scientific paper

We introduce a process for the fabrication of high quality, spatially isolated nano-diamonds on iridium via microwave plasma assisted CVD-growth. We perform spectroscopy of single silicon-vacancy (SiV)-centres produced during the growth of the nano-diamonds. The colour centres exhibit extraordinary narrow zero-phonon-lines down to 0.7 nm at room temperature. Single photon count rates up to 4.8 Mcps at saturation make these SiV-centres the brightest diamond based single photon sources to date. We measure for the first time the fine structure of a single SiV-centre thus confirming the atomic composition of the investigated colour centres.

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