Single Event Effects in the Pixel readout chip for BTeV

Details Single Event Effects in the Pixel readout chip for BTeV Single Event Effects in the Pixel readout chip for BTeV

2001-11-29

arxiv.org/abs/hep-ex/0111094v1

Nucl.Instrum.Meth.A501:183-188,2001

Physics

High Energy Physics

High Energy Physics - Experiment

15 pages, 6 Postscript figures

Scientific paper

10.1016/S0168-9002(02)02030-2

In future experiments the readout electronics for pixel detectors is required to be resistant to a very high radiation level. In this paper we report on irradiation tests performed on several preFPIX2 prototype pixel readout chips for the BTeV experiment exposed to a 200 MeV proton beam. The prototype chips have been implemented in commercial 0.25 um CMOS processes following radiation tolerant design rules. The results show that this ASIC design tolerates a large total radiation dose, and that radiation induced Single Event Effects occur at a manageable level.

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