Simulation of the Interfacial AlN Layer on Band Structures and Carrier Densities of AlGaN/GaN HEMT Structures

Details Simulation of the Interfacial AlN Layer on Band Structures and Carrier Densities of AlGaN/GaN HEMT Structures Simulation of the Interfacial AlN Layer on Band Structures and Carrier Densities of AlGaN/GaN HEMT Structures

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..622l&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 622-622 (2007).

Computer Science

Performance

Semiconductor Compounds, Iii-V Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Surface States, Band Structure, Electron Density Of States, Charge Carriers: Generation, Recombination, Lifetime, And Trapping

Scientific paper

At high electron mobility transistors (HEMT), increase of 2DEG carrier density is an important issue to achieve high performance. Inserting a thin undoped AlN interfacial layer between undoped AlGaN barrier and undoped GaN channel layer is one of the methods to achieve high performance AlGaN/GaN HEMT structures. In this work, 1-band Schrödinger simulations on pseudomorphically grown undoped AlGaN/GaN HEMT structures with and without AlN interfacial layer have been done. The effects of AlN interfacial layer thicknesses on band structures, carrier densities and 2DEG eigenstates have been investigated. In addition, the effects of compositional AlGaN barrier layer have been showed for different layer thicknesses and different compositions.

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