Simulation of Heavily Irradiated Silicon Pixel Detectors

Details Simulation of Heavily Irradiated Silicon Pixel Detectors Simulation of Heavily Irradiated Silicon Pixel Detectors

2006-05-24

arxiv.org/abs/physics/0605215v1

ECONF C0604032:0014,2006

Physics

Instrumentation and Detectors

Invited talk at International Symposium on the Development of Detectors for Particle, AstroParticle and Synchrtron Radiation E

Scientific paper

We show that doubly peaked electric fields are necessary to describe grazing-angle charge collection measurements of irradiated silicon pixel sensors. A model of irradiated silicon based upon two defect levels with opposite charge states and the trapping of charge carriers can be tuned to produce a good description of the measured charge collection profiles in the fluence range from 0.5x10^{14} Neq/cm^2 to 5.9x10^{14} Neq/cm^2. The model correctly predicts the variation in the profiles as the temperature is changed from -10C to -25C. The measured charge collection profiles are inconsistent with the linearly-varying electric fields predicted by the usual description based upon a uniform effective doping density. This observation calls into question the practice of using effective doping densities to characterize irradiated silicon. The model is now being used to calibrate pixel hit reconstruction algorithms for CMS.

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