Silicon gallium doped photoconductor development for the AROME balloon borne instrument

Details Silicon gallium doped photoconductor development for the AROME balloon borne instrument Silicon gallium doped photoconductor development for the AROME balloon borne instrument

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..353m&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 353-356 (SEE N94-15025 03-19)

Physics

Balloon-Borne Instruments, Gallium, Infrared Telescopes, Photoconductors, Silicon, Emission Spectra, Infrared Radiation, Spaceborne Experiments

Scientific paper

The measurement of IR emission features in extended sources originating from PAH's (Polycyclic Aromatic Molecules) material is addressed by the AROME instrument, a balloon borne telescope. For this purpose four Si:Ga photoconductors were developed. They operate at 1.6K inside an integrating cavity. A cold FET based TIA preamplifier provides low noise photocurrent measurement. The estimated noise equivalent power (blip) is 8 times 10 to the minus 14th power W/square root of Hz.

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