Physics
Scientific paper
Aug 2000
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000georl..27.2337f&link_type=abstract
Geophysical Research Letters, Volume 27, Issue 15, p. 2337-2340
Physics
12
Mineral Physics: Creep And Deformation, Physical Properties Of Rocks: Plasticity, Diffusion, And Creep, Tectonophysics: Dynamics Of Lithosphere And Mantle-General, Tectonophysics: Rheology-Mantle
Scientific paper
Silicon diffusion rates were determined in fine-grained (~4.5 μm) hot-pressed forsterite aggregates at 900° to 1200°C and 0.1 MPa using a 30Si-tracer and standard SIMS analysis. There is no measurable difference in diffusion rates between samples buffered by excess MgO or SiO2, nor samples run in dry N2 or H2/CO2. The results yield the Arrhenius parameters D0,bulk=5.4×10-9m2/sec and Q=203+/-36kJ/mol. At 1200°C, the grain boundary diffusion rate of 30Si is similar to 26Mg (Si ~10 times greater), ~102 less than Fe, and ~105 less than O. In addition, the 30Si grain boundary diffusion rate is ~109 greater than the Si volume diffusion rate and indicates that diffusional transport of Si in forsterite aggregates is dominated by grain boundaries.
Farver John R.
Yund Richard A.
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