Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Details Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy Silicon detectors: damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

2006-11-15

arxiv.org/abs/physics/0611142v1

Nucl.Instrum.Meth.A572:297-299,2007

Physics

Instrumentation and Detectors

X-th Pisa Meeting on Advanced Detectors, May 21-27, 2006, La Biodola, Isola d'Elba (Italy), to be published in Nuclear Instrum

Scientific paper

10.1016/j.nima.2006.10.280

In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in concrete environments at the next generations of high energy physics experiments as LHC, SLHC, VLHC, or ULHC are done.

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