SiC as an energetic particle detector

Details SiC as an energetic particle detector SiC as an energetic particle detector

Dec 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005agufmsh23b0343y&link_type=abstract

American Geophysical Union, Fall Meeting 2005, abstract #SH23B-0343

Physics

2774 Radiation Belts, 7514 Energetic Particles (2114), 7847 Radiation Processes, 7894 Instruments And Techniques

Scientific paper

Several new technologies have been introduced recently in the region of semiconductor material for solid state detectors (SSD). Of particular interest is silicon carbide (SiC) since its band gap is larger than that of pure silicon, reducing its dark current and making SiC capable of operating at high temperatures and more tolerant of radiation damage. But the trade off is that a higher band gap also means fewer electron hole pairs generated, and thus a smaller signal, for detecting incident radiation. To determine what the lower limit of SiC detectors to energetic particles is, we irradiated a SiC diode with particles ranging in energy from 50 keV to 1.6 MeV and masses from 1 to 16 amu. We found that the SiC detectors sensitivity was comparable to that of pure silicon, with the SiC detector being able to measure particles down to 50 keV/amu and possibly lower.

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