Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector

Details Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector Si1-xGex/Si heterojunction internal photoemission long-wavelength infrared detector

Oct 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2274...17l&link_type=abstract

Proc. SPIE Vol. 2274, p. 17-23, Infrared Detectors: State of the Art II, Randolph E. Longshore; Ed.

Physics

Scientific paper

Long wavelength Si(subscript 1-x)Ge(subscript x)/Si heterojunction internal photoemission (HIP) infrared detectors have been successfully demonstrated utilizing the growth of degenerately boron doped Si(subscript 1-x)Ge(subscript x) layers on Si. Recently, Si(subscript 0.7)Ge(subscript 0.3)/Si HIP detectors with either a Si(subscript 1-x)Ge(subscript x) single layer or a Si(subscript 1-x)Ge(subscript x)/Si multi-layer have been demonstrated with cutoff wavelengths out to 23 micrometers . Near-ideal thermionic emission dark current characteristics were measured and the electrical potential barriers were determined by the Richardson plot. A photoresponse model, similar to the modified Fowler Equation has been developed for the Si(subscript 1-x)Ge(subscript x)/Si HIP infrared detector at wavelengths corresponding to photon energies less than the Fermi energy. The optical potential barriers, the corresponding cutoff wavelengths, and the emission coefficients, C(subscript 1), for the HIP detectors have been determined from the measured spectral responses using the photoresponse model. Similar optical and thermal potential barriers were obtained.

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