Short wavelength Hg1-xCdxTe infrared detectors prepared by loophole technology

Details Short wavelength Hg1-xCdxTe infrared detectors prepared by loophole technology Short wavelength Hg1-xCdxTe infrared detectors prepared by loophole technology

Oct 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964...67s&link_type=abstract

Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume

Computer Science

Performance

Scientific paper

Short wavelength Hg1-xCdxTe infrared detectors were novelly fabricated by loophole technique basing on Liquid Phase Epitaxial materials, rather than conventional ion implantation technology. The Hg1-xCdxTe material was p type doped by Hg vacancy. The formed sensitive area is an annulus centered on the circular junction. The dimension of the annulus depends on the diffusion lengths of minority carriers in both the p and n regions. Laser Beam Induced Current (LBIC) signals of Scan Laser Microscope measurement were used to determine the key parameters such as the minority diffusion length, the size of both n type and p type regions as well as uniformities of the arrays. Good uniformities were observed for the 4×4 HgCdTe photovoltaic arrays by LBIC signals analysis. Furthermore, exponential decays in LBIC signals revealed average minority carrier diffusion length in p type region was around 9 micron, and the average diameter of the n type annulus was 17 micron. The I-V characteristic measurement of the photodiodes determined average zero bias dynamic resistance R0 which was 1.2E9Ω, and zero bias dynamic resistance junction area product R0A was calculated to be average 7.02E3Ωcm2. Further investigations have been performed for the electro-optical performance examination. Infrared spectral response measurement results showed peak wavelength lay around 2.2 micron with cutoff wavelength about 3.5 micron under temperature 77K, average blackbody detectivity D* was 1.71E10cm Hz1/2W-1.

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