Semiconductor multiple quantum-well photorefractive devices for vibration measurement

Details Semiconductor multiple quantum-well photorefractive devices for vibration measurement Semiconductor multiple quantum-well photorefractive devices for vibration measurement

Sep 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4919...40s&link_type=abstract

Advanced Materials and Devices for Sensing and Imaging. Edited by Yao, Jianquan; Ishii, Yukihiro. Proceedings of the SPIE, Volu

Physics

Scientific paper

Some characteristics of photorefractive semiconductor multiple quantum well devices are discussed from the point of view of a material for the vibration measurement system using two-wave mixing. Device structure and device fabrication is explained, and some results of the measurements on the characteristics of the device are presented and discussed. Finally, the system of vibration measurements is described and some results are discussed. The smallest detectable amplitude of the vibration is 0.4 nm and the signal is linear up to 25 nm. Cut off frequency is 34 kHz at the incident intensity of 90mW/cm2.

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