Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

Details Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies Semiconductor-based superlens for sub-wavelength resolution below the dif-fraction limit at extreme ultraviolet frequencies

2008-11-18

arxiv.org/abs/0811.2968v1

Physics

Optics

Scientific paper

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it possible to achieve negative refraction and super-guiding in resonant semiconductor/dielectric multilayer stacks, similar to what has been demonstrated in metallo-dielectric photonic band gap structures. The exploita-tion of this basic property in semiconductors raises the possibility of new, yet-untapped ap-plications in the UV and soft x-ray ranges.

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