Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1)

Details Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1) Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1)

Sep 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005njph....7..193s&link_type=abstract

New Journal of Physics, Volume 7, Issue 1, pp. 193 (2005).

Physics

6

Scientific paper

The evolution of the Si(1 1 1) surface after submonolayer deposition of Ga has been observed in situ by low-energy electron microscopy and scanning tunnelling microscopy. A phase separation of Ga-terminated \sqrt3\times\sqrt3-R 30° reconstructed areas and bare Si(1 1 1)-7 × 7 regions leads to the formation of a two-dimensional nanopattern. The shape of this pattern can be controlled by the choice of the surface miscut direction, which is explained in terms of the anisotropy of the domain boundary line energy and a high kink-formation energy. A general scheme for the nanopattern formation, based on intrinsic properties of the Si(1 1 1) surface, is presented. Experiments performed with In instead of Ga support this scheme.

Affiliated with

Also associated with

No associations

Rating

Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1) does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1), we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-organized 2D nanopatterns after low-coverage Ga adsorption on Si (1 1 1) will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1220796