Selectively plated infrared-sensitive lead sulfide layers

Details Selectively plated infrared-sensitive lead sulfide layers Selectively plated infrared-sensitive lead sulfide layers

Oct 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2274..219s&link_type=abstract

Proc. SPIE Vol. 2274, p. 219-223, Infrared Detectors: State of the Art II, Randolph E. Longshore; Ed.

Physics

1

Scientific paper

Lead chalcogenides are well-known photoconductors in the infrared region. Lead sulfide detectors occupy an important position among infrared detectors owing to their high sensitivity in the near infrared region (1 - 3.2 microns), room temperature operation, low noise and ease of preparation. In this paper, we report for the first time the preparation of infrared sensitive photoconductive lead sulfide films by the swab plating technique. Adherent, non-porous `p' type lead sulfide films of thickness 3 - 4 microns were obtained. These films, after heat- treatment at 550 degree(s)C, showed a dark resistance of 25 - 30 kilo-ohms with a photosensitivity of 0.28. The films have been characterized by XRD, optical and photoconductivity measurements.

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