Second-generation FPAs with MCT sensor arrays in hybrid approach

Details Second-generation FPAs with MCT sensor arrays in hybrid approach Second-generation FPAs with MCT sensor arrays in hybrid approach

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..151z&link_type=abstract

Proc. SPIE Vol. 1735, p. 151-162, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Physics

Scientific paper

Focal-Plane-Arrays (FPA's) of HgCdTe epitaxial layers meet the requirements of the second generation imaging systems for the 3 - 5 micrometers and 8 - 11 micrometers range. Our approach is a backside illuminated detector array of HgCdTe (MCT) epitaxial layer, connected to the corresponding read-out-device in flip-chip-technique, soldered by Indium bumps. Manufacturing of detector array and hybrid is described. Our CdZnTe substrate growth with subsequent MCT epitaxy and the planar process ensure a reproducible high diode shuntresistance at low defect number and thus homogeneous responsivity and detectivity at the TDI-CCD output level.

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