Schottky barrier focal plane arrays for SWIR and MWIR

Physics

Scientific paper

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Arrays, Charge Coupled Devices, Focal Plane Devices, Infrared Detectors, Infrared Imagery, Schottky Diodes, Silicides, Design Analysis, Quantum Efficiency, Signal To Noise Ratios

Scientific paper

A 1536 pixels butted array consisting of three truly linear CCD (Charge Coupled Device) submodules was developed for infrared imaging. The pixel gap at the butting edges is nominally one and maximum two pixels and the alignment accuracy is better than 5 micrometers within the detector plane and better than 50 micrometers in the Z direction. Schottky barrier sensors were used as IR detectors incorporating three different silicides working in the front-side illumination mode. The main differences between these silicides are the cut-off wavelength and the operating temperature. CoSi2 and NiSi show a cut-off wavelength of about 2.8 micrometers allowing an operating temperature of 150 K and passive cooling, whereas PtSi has a cut-off wavelength of about 6 micrometers working at 77 K. All three devices present a good photoresponse uniformity along the sensor row and also a good noise behavior.

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