Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

Details Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band Room temperature spontaneous emission enhancement from quantum dots in photonic crystal slab cavities in the telecommunications C-band

2009-03-25

arxiv.org/abs/0903.4354v1

Applied Physics Letters (2009) 123101

Physics

Quantum Physics

Scientific paper

10.1063/1.3104855

We report on the control of the spontaneous emission dynamics from InAsP self-assembled quantum dots emitting in the telecommunications C-band and weakly coupled to the mode of a double heterostructure cavity etched on a suspended InP membrane at room temperature. The quality factor of the cavity mode is 44x10^3 with an ultra-low modal volume of the order of 1.2 lambda/n)^3, inducing an enhancement of the spontaneous emission rate of up a factor of 2.8 at 300 K.

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