Ro-vibrational excitation of SiS by He

Physics

Scientific paper

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Scientific paper

Modelling of the astrophysical spectra requires accurate radiative and collisional rates for species of astrophysical interest. The present paper focuses on the calculation of ro-vibrational excitation rate coefficients of SiS by He, useful for studies of high-temperature interstellar environments. A new accurate three-dimensional potential energy surface for the SiS He system, which explicitly takes into account the r-dependence of the SiS vibration, was determined from ab initio calculations. The dynamic calculations were performed using the vibrational close-coupling rotational infinite order sudden (VCC-IOS) method. Cross sections among the first 100 rotational levels of v = 0 4 are calculated for total energies up to 12 000 cm-1. Rate coefficients between the ro-vibrational levels are calculated for temperatures from 300 K to 1500 K.

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