Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

Details Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures Resonant Transport in Nb/GaAs/AlGaAs/GaAs Microstructures

2002-07-12

arxiv.org/abs/hep-ph/0207162v1

Physics

High Energy Physics

High Energy Physics - Phenomenology

7 pages REVTeX, 4 figures, to be published by World Scientific in Proceedings of International Symposium on Mesoscopic Superco

Scientific paper

Resonant transport in a hybrid semiconductor-superconductor microstructure grown by MBE on GaAs is presented. This structure experimentally realizes the prototype system originally proposed by de Gennes and Saint-James in 1963 in \emph{all}-metal structures. A low temperature single peak superimposed to the characteristic Andreev-dominated subgap conductance represents the mark of such resonant behavior. Random matrix theory of quantum transport was employed in order to analyze the observed magnetotransport properties and ballistic effects were included by directly solving the Bogoliubov-de Gennes equations.

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