Rectifying characteristics of an InSb device at low temperature

Details Rectifying characteristics of an InSb device at low temperature Rectifying characteristics of an InSb device at low temperature

Feb 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002aipc..605..185k&link_type=abstract

LOW TEMPERATURE DETECTORS: Ninth International Workshop on Low Temperature Detectors. AIP Conference Proceedings, Volume 605, p

Physics

1

Semiconductor-Device Characterization, Design, And Modeling

Scientific paper

The current-voltage curve of an InSb device was measured at low
temperature down to 0.42 K. Rectifying characteristics became obvious at
2 K and below. This result suggests the possible use of InSb as a
substrate for a radiation detector with high energy resolution. .

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