Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II-VI materials

Details Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II-VI materials Recent developments in the pyrolytic and photolytic deposition of (Cd,Hg)Te and related II-VI materials

Dec 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jcrgr..93..732i&link_type=abstract

(Japan Society of Applied Physics and Japanese Association of Crystal Growth, Conference on Metalorganic Vapor Phase Epitaxy, 4t

Physics

5

Mercury Cadmium Tellurides, Photolysis, Pyrolysis, Vapor Deposition, Vapor Phase Epitaxy, Hall Effect, Organometallic Compounds, P-Type Semiconductors, Pyrometallurgy

Scientific paper

Recent results for the pyrolytic and photolytic MOVPE of cadmium mercury telluride (CMT) and related compounds are reported. In pyrolytic MOVPE the role of 'new' tellurium precursors and their potential for developing low temperature epitaxy is reviewed. Very high purity CMT layers which show classic p-type behavior are discussed. The limitations of the cool down process in giving rise to complex ('anomalous') Hall measurements are analyzed. The interdiffused multilayer process (IMP) has been used to grow very uniform CMT using iPr2Te at 350 C. Growth on GaAs substrates has been shown to give some of the best crystallographic quality CMT layers yet reported. MOVPE CMT has been fabricated into infrared detectors showing state-of-the-art performance in the 8-14-micron band. Developments in photolytic growth of CMT and particularly CdTe are reported. In particular, the use of laser photo-induced epitaxy to achieve local area patterning is demonstrated.

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