Recent developments in CdZnTe gamma-ray detector technology

Details Recent developments in CdZnTe gamma-ray detector technology Recent developments in CdZnTe gamma-ray detector technology

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1734..131b&link_type=abstract

Proc. SPIE Vol. 1734, p. 131-139, Gamma-Ray Detectors, Elena Aprile; Ed.

Physics

Scientific paper

A discussion of recent results in the preparation of Cd(subscript 1-x)Zn(subscript x)Te crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 10(superscript 11) ohm-cm are achieved in Cd(subscript 1-x)Zn(subscript x)Te without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd(subscript 1-x)Zn(subscript x)Te crystals exhibit relatively low defect content, as evidenced by etch-pit-densities

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