Recent advances in the metalorganic molecular beam epitaxy of HgCdTe

Details Recent advances in the metalorganic molecular beam epitaxy of HgCdTe Recent advances in the metalorganic molecular beam epitaxy of HgCdTe

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021...56s&link_type=abstract

Proc. SPIE Vol. 2021, p. 56-66, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W. B

Physics

2

Scientific paper

A brief review is given of recent results to assess the capability of metalorganic molecular beam epitaxy for the low-temperature growth of high-quality low-carrier-concentration CdTe and HgCdTe alloys. In particular, studies of this technique to produce highly uniform HgCdTe material and the extension of the gas source doping of CdTe and HgCdTe with ethyliodide so as to obtain back-doped electron concentrations from 10(superscript 15) to 10(superscript 18) cm(superscript -3) are reported. Some preliminary results on the growth of ternary CdTe/HgCdTe superlattices and the p-type doping of CdTe with As will also be presented. The electrical and optical properties of these materials were determined by resistivity and Hall effect, photoluminescence, and IR transmission measurements between 300 and 10 K.

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