Physics
Scientific paper
Sep 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3360...74c&link_type=abstract
Proc. SPIE Vol. 3360, p. 74-78, Infrared Readout Electronics IV, Bedabrata Pain; Terrence S. Lomheim; Eds.
Physics
Scientific paper
The progress of the JPL in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in RI readout electronics operating below 10 Kelvin is discussed. Results on GaAs JFETs fabricated using a highly isotropic HF-based etchant have been presented previously by our group. The isotropic etch reduced the typical input leakage current at 4K to less than 1 fA. These JFETs had a low frequency noise of just under 1 (mu) V/Hz(superscript 1/2) at 1 Hz at 4K, while dissipating less than 1 (mu) W of power. Building on this work, we have fabricated small-scale integrated circuits based on this GaAs JFET technology. In this paper we report on the fabrication of small-scale integrated circuit multiplexers and amplifiers. An 8 by 1 source-follower-per-detector multiplexer and a three-transistor differential pair have been fabricated and are fully functional at 4K. The input-referred noise and leakage current is consistent with that for the discrete devices. A systematic study of the device size dependence of the noise has been started, but as yet is inconclusive.
Cunningham Thomas J.
Fitzsimmons Michael
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