Physics – High Energy Physics – High Energy Physics - Experiment
Scientific paper
2002-09-27
Nucl.Instrum.Meth. A512 (2003) 318-325
Physics
High Energy Physics
High Energy Physics - Experiment
8 pages, 9 figures, submitted to Nucl. Instr. and Methods as proceedings of the 9th European Symposium on Semiconductor Detect
Scientific paper
10.1016/S0168-9002(03)01909-0
Field effect transistors embedded into a depleted silicon bulk (DEPFETs) can be used as the first amplifying element for the detection of small signal charges deposited in the bulk by ionizing particles, X-ray photons or visible light. Very good noise performance at room temperature due to the low capacitance of the collecting electrode has been demonstrated. Regular two dimensional arrangements of DEPFETs can be read out by turning on individual rows and reading currents or voltages in the columns. Such arrangements allow the fast, low power readout of larger arrays with the possibility of random access to selected pixels. In this paper, different readout concepts are discussed as they are required for arrays with incomplete or complete clear and for readout at the source or the drain. Examples of VLSI chips for the steering of the gate and clear rows and for reading out the columns are presented.
Fischer Paul
Neeser W.
Trimpl Marcel
Ulrici J.
Wermes Norbert
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