Radiometric Characterization of Normal-Incidence InAs/In0.15Ga0.85As Quantum-Dot Detectors

Physics

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Scientific paper

Normal incidence InAs/In0.15Ga0.85As dots-in-a-well detectors operating at T=78K with λcut-off ~8.2 μm and a spectral width (Δλ/λ) of 35% are reported. The peak at 7.2 μm is attributed to the bound-to-bound transitions between the ground state of the dot and the states within the InGaAs well. A broad shoulder around 5 μm, which is attributed to the bound to continuum transition, is also observed. Calibrated blackbody measurements at a device temperature of 78K yield a peak responsivity of 3.58 A/W (Vb=-1V), peak detectivity= 2.7x109cmHz1/2/W (Vb=-0.3V), conversion efficiency of 57% and a gain ~25.

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