Radiative lifetimes in Si i from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet

Details Radiative lifetimes in Si i from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet Radiative lifetimes in Si i from laser-induced fluorescence in the visible, ultraviolet, and vacuum ultraviolet

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991phrva..44.7134o&link_type=abstract

Physical Review A (Atomic, Molecular, and Optical Physics), Volume 44, Issue 11, December 1, 1991, pp.7134-7143

Physics

28

Absolute And Relative Intensities, Abundances, Chemical Composition

Scientific paper

Radiative lifetimes for 47 levels in neutral silicon are reported. Lifetimes are measured using time-resolved laser-induced fluorescence (LIF) on a beam of silicon atoms. The transitions studied span the spectral range 160-410 nm. The experimental methods used are broadly applicable for measuring lifetimes in almost any neutral or singly ionized element using LIF in the visible, ultraviolet, and vacuum-ultraviolet spectral regions. Lifetimes are combined with previously reported branching fractions or branching ratios to generate 36 absolute transition probabilities, most with total uncertainty of 5-10 %.

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