Radiation-tolerant, red-sensitive CCDs for dark energy investigations

Physics

Scientific paper

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Semiconductor-Device Characterization, Design, And Modeling, Microelectronics: Lsi, Vlsi, Ulsi, Integrated Circuit Fabrication Technology, Photodetectors

Scientific paper

We describe the development of thick (200 300 μm), fully depleted p-channel, charge-coupled devices (CCDs). The advantages of these CCDs relative to conventional thin, n-channel CCDs include: high quantum efficiency over a wide range of wavelengths, extending into the near-infrared; negligible fringing at long (˜900 1000 nm) wavelengths; improved radiation tolerance; and a small point-spread function controlled through the application of the bias voltage. These visible-to-near-infrared light detectors are good candidates for the next generation of large focal-plane mosaics under development for dark energy measurements. The Dark Energy Survey has selected these CCDs for the focal plane of a new camera being designed for the Blanco 4 m telescope at CTIO in Chile. They also meet all the requirements for the visible-light detectors for the SuperNova/Acceleration Probe, a satellite-based experiment designed to make precision measurements of dark energy.

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