Physics – Instrumentation and Detectors
Scientific paper
2008-05-26
Physics
Instrumentation and Detectors
Scientific paper
10.0762/DAPNIA
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show that extended defects due to the neutron damage changes the distribution of the pixels pedestals. This is mainly due to the increase of the dark generation current due to the presence of deep traps in the depleted zones of the sensors. Alternatively, the exposure to ionizing irradiation increases the pedestals in a more homogeneous way, this coming from the generation of interface states at the Si/SiO2 interface supplemented by the presence of positively charged traps in the oxides. the sensors' leakage current is then increased. We discuss the results in view of increasing the radiation-hardness of the MAPS, bearing in mind that these chips were not designed with any rad-tol layout technique.
Besancon Marc
Chipaux Remi
Fourches Nicolas
Li Yadong
Lutz P.
No associations
LandOfFree
Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Radiation Induced Effects in a Monolithic Active Pixel Sensor : The Mimosa8 Chip will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-321318