Radiation-induced dark current increase in CMOS active pixel sensors

Details Radiation-induced dark current increase in CMOS active pixel sensors Radiation-induced dark current increase in CMOS active pixel sensors

Oct 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4134..105b&link_type=abstract

Proc. SPIE Vol. 4134, p. 105-114, Photonics for Space Environments VII, Edward W. Taylor; Ed.

Physics

Scientific paper

In this paper we discuss the dark current increase in CMOS Active pixel Sensors (APS) due to total dose and proton induced damage. We describe measurement results on several diodes that were used to investigate the degradation of the pixel photodiode under ionizing radiation. This study resulted in the design of radiation tolerant pixels that have proven to tolerate at least 200 kGy(Si) total dose from a 60Co source. Standard APS sensors show already large degradation after less than 100 Gy(Si) due to a strong surface leakage current increase. Standard CMOS imagers were also evaluated with respect to proton induced damage. Highly energetic protons can displace atoms from their lattice position, giving rise to an increase in mean level of dark current and non-uniformity.

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