Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT

Details Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT Radiation hardness and lifetime of VCSELs and PIN photodiodes for use in the ATLAS SCT

Oct 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4134..206m&link_type=abstract

Proc. SPIE Vol. 4134, p. 206-213, Photonics for Space Environments VII, Edward W. Taylor; Ed.

Physics

High Energy Physics

Scientific paper

This paper reports the radiation hardness of optical components to be used in the binary readout of one of the next generation of detectors in high energy physics. The optical components will have to sustain a total ionizing dose of 500 kGy and a 1 MeV equivalent neutron fluence of 1015 n cm-2. Emitters of VCSEL type have been chosen and have shown a shift of 1 mA in the laser threshold current after irradiation, but are still suitable for our purpose. The epitaxial Si PIN photodiode receivers have an acceptable 30% drop in responsivity providing a higher reverse bias is applied. Speed and lifetime of both components appear to be unaffected by the radiation damage. Temperature characteristics showing differences from un- irradiated materials will be also presented.

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