Radiation Effects on Bipolar and MOS Transistors Made in Bicmos Technology

Details Radiation Effects on Bipolar and MOS Transistors Made in Bicmos Technology Radiation Effects on Bipolar and MOS Transistors Made in Bicmos Technology

Jul 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004apsp.conf..622c&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 8th Conference. Held 6

Physics

Medical Physics

Scientific paper

Bipolar transistors were irradiated by neutrons, ions, or by both of them. Fast neutrons, as well as other types of particles, produce defects, mainly by displacing silicon atoms from their lattice positions to interstitial locations, i.e. generating vacancy-interstitial pairs, the so-called Frenkel pairs. The experimental results indicate that the gain variation is linearly related to the non-ionizing energy loss (NIEL) deposition for both neutrons and incoming ions.

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