Physics
Scientific paper
Jun 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.340..269b&link_type=abstract
In ESA, Frequency and Time Forum p 269-272 (SEE N93-24978 09-70)
Physics
Doped Crystals, Germanium, Irradiation, Quartz Crystals, Radiation Dosage, Radiation Effects, Annealing, Crystal Defects, Crystal Growth, Crystal Oscillators, Frequency Control, Low Temperature, Room Temperature
Scientific paper
Cultured quartz crystals doped heavily with Ge (Ge concentration approximately 3000 ppm) were studied for their infrared spectral characteristics as a function of irradiation temperature. The irradiation was done in sequence at 77 K, 300 K, and finally again at 77 K. Infrared spectra show that in addition to the growth defect bands the previously unreported peak at 3656/cm is caused due to the presence of Ge in quartz. Intense irradiation at 77 K in prior 300 K irradiated samples exhibit the presence of a band at 3400/cm which is a different defect center than the growth defect band at this frequency. Production curve for this band shows a linear dose dependence.
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