Physics
Scientific paper
Dec 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1734..287h&link_type=abstract
Proc. SPIE Vol. 1734, p. 287-294, Gamma-Ray Detectors, Elena Aprile; Ed.
Physics
Scientific paper
High resistivity (over 10.0 kilohm.cm) extrinsic P-type Si was produced from high pure P- type Si (resistivity between 1.0 and 2.5 kilohm.cm, lifetime over 1 ms), using the neutron transmutation doping technique. Material obtained by this method, used for detectors, has better properties in dopant homogeneity and controllability than conventionally doped ones. Improved radiation detectors of the surface barrier type were obtained by deposition of amorphous Ge and Al, Au, respectively, for contacts. Results obtained by testing two types of detection structures are presented. The first type, for gamma radiation, are of a sensitive area of 100 square mm and a sensitive depth of 300 micrometers . They present a good response for Cs- 137, higher than 400 p/s/cGy/h. The second type, for alpha-radiation (2...9 MeV) and beta- radiation (225 keV...2.26 MeV), are of a sensitive area of 5 square cm and a sensitive depth of 250 micrometers . Calibration was done obtaining: R(subscript (alpha) ) equals min.1 p.square cm/s.Bq for Am-241 (5.45 MeV) and R(subscript (beta) ) equals min.0.7 p.square cm/s.Bq for Sr-90+ Y-90 (2.26 MeV). Original results concerning functioning tests of these detectors in special conditions such as temperatures between -25 degree(s)C and +45 degree(s)C, humidity 90% at 30 degree(s)C, and mechanical shocks are presented.
Halmagean Eugenia T.
Lazarovici Cristian C.
Lazarovici Doina N.
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