Radiation Damage Measurements and Modelling of P-Channel Ccds Irradiated with 12 and 55 Mev Protons

Physics – Medical Physics

Scientific paper

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Scientific paper

Fully-depleted, high resistivity CCDs have been developed at Lawrence Berkeley National Laboratory to achieve extended red response to beyond 1 μm. The n-type silicon used has been show to be radiation hard in high energy physics experiments. Demonstrating radiation tolerance in p-channel CCDs fabricated in this material is of particular interest to the SuperNova Acceleration Probe space mission. Charge Transfer Efficiency (CTE) of devices irradiated with 12 and 55 MeV protons is presented as a function of the radiation dose and temperature. An analytical model of the CTE has been developed and used to fit the data in order to extract information about the traps types and their density.

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