Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker

Details Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker Radiation damage and annealing in 1310-nm InGaAsP/InP lasers for the CMS tracker

Oct 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4134..176g&link_type=abstract

Proc. SPIE Vol. 4134, p. 176-184, Photonics for Space Environments VII, Edward W. Taylor; Ed.

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Scientific paper

Radiation damage in 1310 nm InGaAsP/InP multi-quantum-well lasers caused by 0.8 MeV neutrons is compared with the damage from other radiation sources, in terms of the increase in laser threshold current. The annealing behavior is then presented both in terms of both temperature and forward-bias current dependence. The annealing can be described by a model where radiation induced defects have a uniform distribution of activation energies for annealing. This model can then be used to predict the long-term damage expected for lasers operating inside the CMS tracker.

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