Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation

Details Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation Quantum Lithography Based on Multiple Light Exposures for Arbitrary Sub-Diffraction-Limit Pattern Generation

2008-06-13

arxiv.org/abs/0806.2175v2

Physics

Quantum Physics

13 pages, 4 figures; Added a figure and references, revised the Abstract and the text to better emphasize the major points

Scientific paper

We propose a super-resolution quantum lithography scheme based on coherent population trapping in lambda-type atoms coupled to temporally-cascaded standing-wave driving fields. By realizing effective multiplication of optical intensity profiles on an atomic state density distribution, the scheme enables an arbitrarily high degree of resolution enhancement without modifying the atomic level structure of the photographic medium or the light source configuration. It is also shown that the visibility of the super-resolution patterns is preserved under a significant atomic state decoherence rate.

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