Physics
Scientific paper
Jun 2004
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5353...81d&link_type=abstract
Semiconductor Photodetectors. Edited by Linden, Kurt J.; Dereniak, Eustace L. Proceedings of the SPIE, Volume 5353, pp. 81-8
Physics
Scientific paper
We report on the fabrication of quantum grid infrared photodetector (QGIP) arrays and demonstrate their feasibility for use as multi-channel long wavelength infrared spectrometers. The quantum well infrared photodetector (QWIP) material structure was designed to exhibit broadband absorption in the wavelength range of 7 μm to 16 μm. By fabricating QGIP devices with this QWIP material, scattering of light at an individual wavelength of interest within the material absorption range can create narrow band detection in each device. Arrays of QGIP devices with varying geometry, each tailored to respond to a discrete wavelength were fabricated. Details of the epi-growth, processing steps taken to fabricate required device features for narrow band absorption of the QGIP devices, and characterization methods will be discussed.
Choi Kwong-Kit
Dang Gerard
Little John
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