Quantum efficiency model for p+-doped back-illuminated CCD imager

Details Quantum efficiency model for p+-doped back-illuminated CCD imager Quantum efficiency model for p+-doped back-illuminated CCD imager

Jul 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1447..156h&link_type=abstract

Proc. SPIE Vol. 1447, p. 156-164, Charge-Coupled Devices and Solid State Optical Sensors II, Morley M. Blouke; Ed.

Physics

Scientific paper

An analytical model has been developed for predicting the spectral response of thinned, p(superscript +)-doped back-illuminated charge-coupled device (CCD) imagers. The device is divided into two regions: a thin, uniformly doped p(superscript +) layer used to passivate the illuminated back surface from external electrical effects, and a p(superscript -) region that extends from the p(superscript +) region across the approximately 10-micrometers thickness of the device to the potential well in the buried channel. The one-dimensional steady-state continuity equation for low-injection conditions has been solved analytically for the surface p(superscript +) region, which is characterized by electron diffusion length and coefficients appropriate for the doping level and a surface recombination velocity S(subscript n) that represents the loss of photoelectrons at the surface. All photoelectrons generated in the p(superscript -) region are assumed to be collected in the buried channel because of the long diffusion length and the presence of a field sweeping the carriers into the CCD channel. The effect of multiple internal reflections on photoabsorption at long wavelengths is included. The quantum efficiency of this device is calculated as a function of the depth and recombination velocity of the p(superscript +) surface layer, using S(subscript n) as the only independent fitting parameter, and matches experimental results well over the wavelength range from 360 to 1100 nm.

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