Quantum 1/F noise in solid-state devices in particular Hg(1-x)Cd(x)Te N(+)-p diodes

Details Quantum 1/F noise in solid-state devices in particular Hg(1-x)Cd(x)Te N(+)-p diodes Quantum 1/F noise in solid-state devices in particular Hg(1-x)Cd(x)Te N(+)-p diodes

Aug 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991umn..reptr....v&link_type=abstract

Final Report Minnesota Univ., Minneapolis. Dept. of Electrical Engineering.

Physics

Bipolar Transistors, Heterojunction Devices, Jfet, Laser Outputs, P-I-N Junctions, Quantum Theory, Resonant Tunneling, Spectral Energy Distribution, Aluminum Gallium Arsenides, Frequency Ranges, Mercury Cadmium Tellurides, Silicon Junctions, Silicon Transistors

Scientific paper

Spectral intensity measurements of current fluctuations were investigated in the following solid state devices: mercury cadmium telluride diodes, AlGaAs/GaAs resonant tunneling diodes, InGaAs/Indium phosphide diodes, silicon bipolar transistors, AlaGaAs/GaAs heterojunction bipolar transistors, and silicon junction field effect transistors. The measurements were taken in the frequency range from 1 Hz to 100 kHz under different bias conditions and in the temperature range from 78 to 400 K. In addition, progress was made on the theoretical aspects of quantum 1/f noise.

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