Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector

Details Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector Pulsed-laser-induced quantum well intermixing on the InGaAs/InGaAsP MQW waveguide photodetector

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..167l&link_type=abstract

Proc. SPIE Vol. 4650, p. 167-172, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

Scientific paper

In this paper, we report our research work on the application of the pulsed-laser-induced disordering (P-LID) technique in InGaAs/InGaAsP MQW waveguide photodetector. A Q-switched Nd-YAG laser with wavelength of 1.064 micrometers was used to irradiate on the InGaAs/InGaAsP quantum well materials, annealing process at 625 degree(s)C for 120s was followed. A maximum bandgap shift of up to 112meV has been observed. The variety of photocurrent curves indicated that the cut-off wavelength of the photodetector becomes shorter with increasing of intermixing strength.

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