Processing and characterization of a 128 X 128 GaAs/GaAlAs quantum well infrared detector array

Details Processing and characterization of a 128 X 128 GaAs/GaAlAs quantum well infrared detector array Processing and characterization of a 128 X 128 GaAs/GaAlAs quantum well infrared detector array

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..159b&link_type=abstract

Proc. SPIE Vol. 2554, p. 159-166, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Physics

Scientific paper

A 128 multiplied by 128 GaAs/GaAlAs quantum well infrared (QWIP) sensing array with a 2- D grating and indium bumps has been fabricated. The array has been characterized prior to flip chip bonding, both electrically and optically. The obtained responsivity and dark current of selected pixels in the array indicate high material uniformity. Design and processing issues are discussed.

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