Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers

Details Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers Probing the momentum relaxation time of charge carriers in ultrathin semiconductor layers

2009-08-06

arxiv.org/abs/0908.0866v1

Opt. Express 17, pp. 17450-17456 (2009)

Physics

Optics

Scientific paper

We report on a terahertz time-domain technique for measuring the momentum relaxation time of charge carriers in ultrathin semiconductor layers. The phase sensitive modulation technique directly provides the relaxation time. Time-resolved THz experiments were performed on n-doped GaAs and show precise agreement with data obtained by electrical characterization. The technique is well suited for studying novel materials where parameters such as the charge carriers' effective mass or the carrier density are not known a priori.

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