Present status of experimental S-band GaAs-photogun driven by the solid state GaAs pulse laser

Details Present status of experimental S-band GaAs-photogun driven by the solid state GaAs pulse laser Present status of experimental S-band GaAs-photogun driven by the solid state GaAs pulse laser

Jun 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001aipc..570..988d&link_type=abstract

The fourteenth international spin physics symposium, SPIN2000. AIP Conference Proceedings, Volume 570, pp. 988-991 (2001).

Physics

Electron Sources, Polarized Beams, Relativistic Electron And Positron Beams, Photomultipliers, Phototubes And Photocathodes

Scientific paper

This paper concerns the present status of experimental RF-photogun at BINP (Novosibirsk). The bulk GaAs-photocathode to investigate some none well-known phenomenon on the photocathode surface in high RF-field is used. An interesting question concerned with S-band photogun is to achieve bright beam with high level of polarization. For this goal two solid state GaAs lasers (SSL) at 820 nm wavelength with 2-4 W power and pulse duration on 2 μs and 200 ps were designed and produced. .

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